| Display title | Chemistry:Aluminium gallium nitride |
| Default sort key | Aluminium Gallium Nitride |
| Page length (in bytes) | 3,018 |
| Namespace ID | 3022 |
| Namespace | Chemistry |
| Page ID | 818298 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>MedAI |
| Date of page creation | 03:48, 6 February 2024 |
| Latest editor | imported>MedAI |
| Date of latest edit | 03:48, 6 February 2024 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride.
The bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1).
AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths... |
