Engineering:Resputtering
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Resputtering involves re-emission of material, e.g., SiO2, deposited by sputtering during the deposition.[1] Similar to sputtering, the re-emission is caused by ion bombardment of the deposited material. The resputtering technique was first published by L.I. Maissel et al. in the Journal of Applied Physics (Jan. 1965, p. 237) and was called Biased Sputtering.[2]
References
- ↑ Gregoire, J. M.; Lobovsky, M. B.; Heinz, M. F.; DiSalvo, F. J.; van Dover, R. B. (26 November 2007). "Resputtering phenomena and determination of composition in codeposited films". Physical Review B 76 (19): 195437. doi:10.1103/PhysRevB.76.195437. Bibcode: 2007PhRvB..76s5437G.
- ↑ Kester, Daniel J.; Messier, Russell (NaN). "Macro-effects of resputtering due to negative ion bombardment of growing thin films" (in en). Journal of Materials Research 8 (8): 1928–1937. doi:10.1557/JMR.1993.1928. ISSN 2044-5326. Bibcode: 1993JMatR...8.1928K. https://www.cambridge.org/core/journals/journal-of-materials-research/article/macroeffects-of-resputtering-due-to-negative-ion-bombardment-of-growing-thin-films/7191B65B0AB12A0EF8226DC2DD381AA9. Retrieved 24 October 2019.
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