Chemistry:Borosilicide

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Boride silicides (also called borosilicides)[1] are mixed anion compounds containing silicide and boride linked into anions.[2]

Synthesis

Boride silicides may be produced by melting together the elements in a boron nitride crucible, sealed in tantalum. Tin may be used as a solvent.[3] Alkali metal iodides can also be used as a solvent.[4]

Use

Borosilicides are of interest in research for ultra-high temperature materials for use in jet engines, catalysts and also for thermoelectric materials.[4]

Structure

There are not many different structures for borosilicides, particularly compared to the boride carbides. Most known compounds are rich in boron, but a few are rich in silicon.[5] The boron and silicon atoms do not appear as isolated ions, but are covalently bound into a network. Boron networks found in metal borides are enlarged by the addition of silicon, which allows inclusion of metal atoms that are larger than would otherwise be stable.[6]

Transition elements can form a tetragonal M5SiB2 series of compounds. These are called MAB phases (M for metal, A here is silicon, and B is boron).[7] However the compounds for zirconium and hafnium are energetically unfavourable.[8]

List

formula system space group unit cell Å, volume density comment ref
α-SiB3 rhombohedral band gap 0.2 eV; ignites 600°C [9]
β-SiB3

(Si4B11.6C0.4)

orthorhombic Imma a = 8.3915 b = 12.5680 c = 6.2134 Z = 16 655.29 2.454 transluscent and amber; Si4 chain and B12 cluster; band gap 2.0 eV; acid and base resistant; stands hot oxygen [9]
LiBSi2 tetragonal P42/nmc a=6.83225, c=8.83924 Z=8 seven, six and five-membered rings; dark gray; moisture and acid stable; band gap 1.1 eV [10]
Li2B12Si2 orthorhombic Cmce a=6.1060 b=10.979 c=8.4050 Z=4 transparent yellow; Vickers hardness=20.3 GPa; band gap 2.27 eV [3]
Na2B6Si2 trigonal R3m a = 5.0735 c = 16.0004 Z=3 356.3 closo [B6]2− (Si2)0 [11]
Na8B4.1Si41.9 cubic I43m a=9.699 V=906.87 [12][13]
Na8B74.5Si17.5 hexagonal P63/mmc a = 10.2392 c = 10.9215 Z=1 991.62 2.480 black; Na8(B12)6Si16[BSi]1.5[B2]0.5. B12 [14][15]
MgB12Si2 orthorhombic Pnma a=10.980 b=6.1098 c=8.3646 Z=4 yellow-green; B12 icosahedra linked by Si [16]
Mg3B36Si9C trigonal R3m a=10.079 c=16.372 black; acid stable; Vickers hardness 17.0 GPa [17]
Na3MgB37Si9 trigonal R3m a = 10.1630 c = 16.5742 Z=3 1482.5 [18]
K7B7Si39 cubic Pm3n a=9.952 clathrate [19][20]
ScB12.0C0.65Si0.071 cubic F43m a=20.3085 [9][21]
V5SiB2 tetragonal I4/mcm a=5.810 c=10.790 [22]
CrSi3(B12)Se12(B2Se3)1.33 hexagonal P6322 a=12.9772 c=9.532 Z=2 1390.2 black [9][23]
Mn5SiB2 tetragonal I4/mcm a=5.619 c=10.458 330.17 [4]
CrMn4SiB2 tetragonal I4/mcm a=5.6064 c=10.4244 327.6 6.517 ferromagnetic Curie T=270 K [24]
Fe5SiB2 tetragonal I4/mcm a=5.555 c=10.342 319.17 [4]
Co4.75Si2B tetragonal I4/mcm a=8.648 c=4.265 318.9 [4]
Ni6Si2B hexagonal P62m a=6.111 c=2.884 93.252 [4]
Rb8B8Si38 cubic Pm3n a = 9.9583 V=987.69 Z=1 3.0902 air and water stable; semiconductor; [14]
YB17.6Si4.6 rhombohedral R3m a=10.0841 c=16.4714 [25]
YB41Si1.2 orthorhombic Pbam a=16.674 b=17.667 c=9.5110 [26]
Y1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.080 c=16.426 Z=9 [27]
YB44Si2 orthorhombic Pbam a=16.674 b=17.667 c=9.511 2801.7 [6]
Y2.04(B12)3(CSi)Si8 trigonal R3m [28]
Y5Si2B8 tetragonal P4/mbm Z=2 [29]
Y2B36Si9C trigonal R3m a=10.0344 c=16.348 [17]
Nb5SiB2 tetragonal I4/mcm a=6.569 c=11.878 Z=4 Superconductor Tc=7 K; for Nb5Si2.4B0.6 7.8K [30][31]
Nb4VSiB2 tetragonal I4/mcm [32]
Nb4CrSiB2 tetragonal I4/mcm a = 6.109 c = 11.547 [33]
Mo5SiB2 tetragonal I4/mcm a=6.0272 c=11.0671 Z=4 oxidises to borosilicate; Superconductor Tc=5.6 K [34][35][36]
Mo4VSiB2 tetragonal I4/mcm a= 5.9669 c= 11.02129 [32]
Mo4MnSiB2 tetragonal I4/mcm a = 5.938 c = 11.057 [24]
Ti4MoSiB2 tetragonal I4/mcm a= 6.13262 c= 11.52567 band gap 4.1 eV [37]
Mo4CrSiB2 tetragonal I4/mcm a = 5.939 c = 11.016 [33]
Cs8B8Si38 cubic Pm3n a=10.0312 Z=1 1009.39 3.647 formed under pressure; semiconductor; 3D network of dodecahedra and 14-hedra enclosing Cs ions [38]
CeSi1·5B0.5 hexagonal P6/mmm a = 3.9922 c = 4.3053 [39]
GdB18Si5 tetragonal P4/mbm a=7.2665 c=8.2229 [40][41]
GdB44Si2 [42]
Gd2B36Si9C trigonal R3m a=10.0955 c=16.454 [17]
Gd5Si2B8 tetragonal P4/mbm a=7.2665 c=8.2229 metallic [43][44]
Gd5Si3B0.6 hexagonal P63/mcm a=8.5080 c=6.4141 [2][44]
Gd5Si23B8 B6 octahedra and Si2 [2]
Gd1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.069 c=16.447 Z=9 [27]
Sm5Si2B8 tetragonal P4/mbm a=7.2616 c=8.2660 Z=2 [29]
TbB41Si1.2 orthorhombic Pbam ferromagnetic < 18 K; B12Si3 and B12 polyhedra [45]
Tb9B3Si13.83 R32 a = 6.668 c = 12.405 Z=1 [46]
Tb3-xC2Si8(B12)3 [47]
Tb1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a =10.075 b =10.075 c =16.41 Z=9 [27]
TbB44Si2 orthorhombic Pbam a=16.651 b=17.661 c=9.500 2793.7 [6]
Tb1.8C2Si8(B12)3 rhombohedral R3m a=10.1171 c=16.397 Z=3 1453.4 band gap 0.9 eV [48]
Tb2B36Si9C trigonal R3m a=10.0307 c=16.352 [17]
Tb5Si2B8 tetragonal P4/mbm a=7.2616 c=8.2660 Z=2 [29]
Dy0.7B12.33Si3 trigonal R3m a=10.0782 c=16.4651 Z=9 1448.3 black [49]
Dy1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.058 c=16.412 Z=9 [27]
DyB44Si2 orthorhombic Pbam a=16.658 b=17.655 c=9.508( 2796.3 [6]
Dy2B36Si9C trigonal R3m a=10.0735 c=16.323 [17]
Dy2.1(B12)3(CSi)Si8 trigonal R3m [28]
Dy5Si2B8 tetragonal P4/mbm Z=2 [29]
Ho1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.062 c=16.365 Z=9 [27]
HoB44Si2 orthorhombic Pbam a=16.608 b=17.578 c=9.492 2771.1 [6]
Ho5Si2B8 tetragonal P4/mbm a=7.1830 c=8.9900 Z=2 [29]
Ho2B36Si9C trigonal R3m a=10.0643 c=16.2699 [17]
Er1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.047 c=16.393 Z=9 [27]
ErB44Si2 orthorhombic Pbam a=16.600 b=17.621 c=9.485(5) 2774.4 [6]
Er2B36Si9C trigonal R3m a=10.016 c=16.309 [17]
Er3Si3.83 B (Er18Si23B6) trigonal R32 a = 6.5568 c = 24.5541 Z = 6 914.19 6.82 shiny grey [5]
Er8B3Si17 orthorhombic Cmc21 a=4.0128b=28.867 c=3.8413 Z=1 [50]
Tm1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.068 c=16.350 Z=9 [27]
TmB44Si2 orthorhombic Pbam a=16.655 b=17.667 c=9.494 2793.6 [6]
Tm2B36Si9C trigonal R3m a=10.0156 c=16.296 [17]
Yb1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.095 c=16.470 Z=9 [27]
YbB44Si2 orthorhombic Pbam a=16.636 b=17.644 c=9.488 2785.0 [6]
YbB45.6Si1.0 orthorhombic a=16.636 b=17.644 c=9.488 [51]
YbB3Si13.83 R32 a = 6.5796 c = 12.2599 Z=1 [46]
Yb2B36Si9C trigonal R3m a=10.1103 c=16.314 [17]
Lu1−xB12Si3.3−δ (0⩽x⩽0.5, δ≈0.3) rhombohedral R3m a=10.062 c=16.297 Z=9 [27]
Hf5Si3B0.2 hexagonal P63/mcm a = 7.8557 c = 5.52622 Z=2 Ultra-high temperature ceramic [52]
W5SiB2 tetragonal I4/mcm Superconductor Tc = 5.8 K [30][53]
W4CrSiB2 tetragonal I4/mcm a = b: 5.942 c = 10.948 [33]
W4.5Ta0.5SiB2 tetragonal I4/mcm Superconductor Tc=6.5 K [30]


References

  1. ↑ . doi:10.1179/pom.1958.1.1-2.0. 
  2. ↑ 2.0 2.1 2.2 Ben Yahia, Mouna; Roger, Jérôme; Rocquefelte, Xavier; Gautier, Régis; Bauer, Joseph; Guérin, Roland; Saillard, Jean-Yves; Halet, Jean-François (September 2006). "Portraits of some representatives of metal boride carbide and boride silicide compounds". Journal of Solid State Chemistry 179 (9): 2779–2786. doi:10.1016/j.jssc.2005.12.032. 
  3. ↑ 3.0 3.1 Vojteer, Natascha; Schroeder, Melanie; Röhr, Caroline; Hillebrecht, Harald (2008-08-18). "Li 2 B 12 Si 2: The First Ternary Compound in the System Li/B/Si: Synthesis, Crystal Structure, Hardness, Spectroscopic Investigations, and Electronic Structure" (in en). Chemistry – A European Journal 14 (24): 7331–7342. doi:10.1002/chem.200701949. ISSN 0947-6539. PMID 18618567. Bibcode: 2008ChEuJ..14.7331V. https://chemistry-europe.onlinelibrary.wiley.com/doi/10.1002/chem.200701949. 
  4. ↑ 4.0 4.1 4.2 4.3 4.4 4.5 Janisch, Daniel; Igoa Saldaña, Fernando; De Rolland Dalon, Edouard; V. M. Inocêncio, Carlos; Song, Yang; Autran, Pierre-Olivier; Miche, Antoine; Casale, Sandra et al. (2024-08-07). "Covalent Transition Metal Borosilicides: Reaction Pathways in Molten Salts for Water Oxidation Electrocatalysis" (in en). Journal of the American Chemical Society 146 (31): 21824–21836. doi:10.1021/jacs.4c06074. ISSN 0002-7863. PMID 39073899. Bibcode: 2024JAChS.14621824J. https://pubs.acs.org/doi/10.1021/jacs.4c06074. 
  5. ↑ 5.0 5.1 Babizhetskyy, Volodymyr; Jardin, Régis; Gautier, Régis; Fontaine, Bruno; Halet, Jean-François (2021-11-25). "Flux synthesis, crystal structure and electronic properties of the layered rare earth metal boride silicide Er 3 Si 5– x B. An example of a boron/silicon-ordered structure derived from the AlB 2 structure type" (in en). Zeitschrift für Naturforschung B 76 (10–12): 869–879. doi:10.1515/znb-2021-0143. ISSN 0932-0776. https://www.degruyterbrill.com/document/doi/10.1515/znb-2021-0143/html. 
  6. ↑ 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 Mori, Takao (2006-05-01). "Crystal growth and magnetic properties of rare earth borosilicides" (in en). Zeitschrift für Kristallographie - Crystalline Materials 221 (5–7): 464–471. doi:10.1524/zkri.2006.221.5-7.464. ISSN 2196-7105. Bibcode: 2006ZK....221..464M. https://www.degruyterbrill.com/document/doi/10.1524/zkri.2006.221.5-7.464/html. 
  7. ↑ Zhang, Xianman; Fu, Ren; Hu, Qi; Luo, Hongfeng (March 2026). "Unlocking the compositional engineering of MAB phases and its induced whisker growth: A review". Journal of Alloys and Compounds 1059. doi:10.1016/j.jallcom.2026.187166. 
  8. ↑ Ni, Na; Zhang, Hanchao; Zhou, Yanchun (October 2022). "Electronic structure, bonding characteristics, and mechanical behaviors of a new family of Si-containing damage-tolerant MAB phases M5SiB2 (M = IVB—VIB transition metals)". Journal of Advanced Ceramics 11 (10): 1626–1640. doi:10.1007/s40145-022-0636-9. 
  9. ↑ 9.0 9.1 9.2 9.3 Salvador, James R.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G. (2003-04-29). "Stabilization of β-SiB 3 from Liquid Ga: A Boron-Rich Binary Semiconductor Resistant to High-Temperature Air Oxidation" (in en). Angewandte Chemie International Edition 42 (17): 1929–1932. doi:10.1002/anie.200219986. ISSN 1433-7851. PMID 12730971. https://onlinelibrary.wiley.com/doi/10.1002/anie.200219986. 
  10. ↑ Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F.; Konar, Sumit; Fässler, Thomas F.; Häussermann, Ulrich (2013-06-03). "LiBSi 2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels" (in en). Angewandte Chemie International Edition 52 (23): 5978–5982. doi:10.1002/anie.201301540. ISSN 1433-7851. PMID 23610025. Bibcode: 2013ACIE...52.5978Z. https://onlinelibrary.wiley.com/doi/10.1002/anie.201301540. 
  11. ↑ Carrillo-Cabrera, Wilder; Hübner, Julia-Maria; Freccero, Riccardo; Jung, Walter; Baitinger, Michael; Grin, Juri; Schwarz, Ulrich (2024-09-11). "Na 2 B 6 Si 2: A Prototype Silico-boride with Closo (B 6 ) 2– Clusters" (in en). Journal of the American Chemical Society 146 (36): 24759–24763. doi:10.1021/jacs.4c08745. ISSN 0002-7863. PMID 39186750. Bibcode: 2024JAChS.14624759C. 
  12. ↑ "Isostructural phase transition and equation of state of type-I and type-VIII metallic sodium borosilicide clathrates" (in en). https://arxiv.org/html/2512.04878v2. 
  13. ↑ Hübner, Julia-Maria; Carrillo-Cabrera, Wilder; Kozelj, Primoz; Prots, Yurii; Baitinger, Michael; Schwarz, Ulrich; Jung, Walter (2022-08-03). "A Borosilicide with Clathrate VIII Structure" (in en). Journal of the American Chemical Society 144 (30): 13456–13460. doi:10.1021/jacs.2c04745. ISSN 0002-7863. PMID 35875975. Bibcode: 2022JAChS.14413456H. 
  14. ↑ 14.0 14.1 Hübner, Julia-Maria; Jung, Walter; Schmidt, Marcus; Bobnar, Matej; Koželj, Primož; Böhme, Bodo; Baitinger, Michael; Etter, Martin et al. (2021-02-15). "Cage Adaption by High-Pressure Synthesis: The Clathrate-I Borosilicide Rb 8 B 8 Si 38" (in en). Inorganic Chemistry 60 (4): 2160–2167. doi:10.1021/acs.inorgchem.0c02357. ISSN 0020-1669. PMID 33104343. 
  15. ↑ Morito, Haruhiko; Eck, Bernhard; Dronskowski, Richard; Yamane, Hisanori (2010). "Synthesis and crystal structure of sodium borosilicide, Na8B74.5Si17.5" (in en). Dalton Transactions 39 (42): 10197–10302. doi:10.1039/c0dt00801j. ISSN 1477-9226. PMID 20886125. https://xlink.rsc.org/?DOI=c0dt00801j. 
  16. ↑ Ludwig, Thilo; Hillebrecht, Harald (June 2006). "Synthesis and crystal structure of MgB12Si2—The first ternary compound in the system B/Mg/Si" (in en). Journal of Solid State Chemistry 179 (6): 1623–1629. doi:10.1016/j.jssc.2006.02.013. https://linkinghub.elsevier.com/retrieve/pii/S0022459606001046. 
  17. ↑ 17.0 17.1 17.2 17.3 17.4 17.5 17.6 17.7 17.8 Ludwig, Thilo; Pediaditakis, Alexis; Sagawe, Vanessa; Hillebrecht, Harald (August 2013). "Synthesis, crystal structure and properties of Mg3B36Si9C and related rare earth compounds RE3−xB36Si9C (RE=Y, Gd–Lu)" (in en). Journal of Solid State Chemistry 204: 113–122. doi:10.1016/j.jssc.2013.05.024. https://linkinghub.elsevier.com/retrieve/pii/S0022459613002685. 
  18. ↑ Morito, Haruhiko; Ikeda, Takuji; Katsura, Yukari; Yamane, Hisanori (2022-02-01). "Na 3 MgB 37 Si 9: an icosahedral B 12 cluster framework containing {Si 8 } units". Acta Crystallographica Section e Crystallographic Communications 78 (2): 203–206. doi:10.1107/S2056989022000494. ISSN 2056-9890. PMID 35145751. 
  19. ↑ Jung, Walter; Lörincz, Josef; Ramlau, Reiner; Borrmann, Horst; Prots, Yurii; Haarmann, Frank; Schnelle, Walter; Burkhardt, Ulrich et al. (2007-09-03). "K 7 B 7 Si 39 , a Borosilicide with the Clathrate I Structure" (in en). Angewandte Chemie International Edition 46 (35): 6725–6728. doi:10.1002/anie.200701028. ISSN 1433-7851. PMID 17668905. Bibcode: 2007ACIE...46.6725J. https://onlinelibrary.wiley.com/doi/10.1002/anie.200701028. 
  20. ↑ Ramlau, Reiner; Jung, Walter; Grin, Yuri (July 2017). "Atomic Resolution Microscopy of Clathrate-I Type Borosilicides" (in en). Microscopy and Microanalysis 23 (S1): 488–489. doi:10.1017/S1431927617003129. ISSN 1431-9276. Bibcode: 2017MiMic..23S.488R. https://academic.oup.com/mam/article/23/S1/488/6944398. 
  21. ↑ Tanaka, Takaho; Sato, Akira (April 2002). "A Novel Boron-rich Scandium Borocarbosilicide; Sc0.83−xB10.0−yC0.17+ySi0.083−z (x=0.030, y=0.36 and z=0.026): Floating Zone Crystal Growth and Structure Analysis" (in en). Journal of Solid State Chemistry 165 (1): 148–158. doi:10.1006/jssc.2002.9524. https://linkinghub.elsevier.com/retrieve/pii/S0022459602995241. 
  22. ↑ Ni, Na; Zhang, Hanchao; Zhou, Yanchun (October 2022). "Electronic structure, bonding characteristics, and mechanical behaviors of a new family of Si-containing damage-tolerant MAB phases M5SiB2 (M = IVB—VIB transition metals)" (in en). Journal of Advanced Ceramics 11 (10): 1626–1640. doi:10.1007/s40145-022-0636-9. ISSN 2226-4108. https://link.springer.com/10.1007/s40145-022-0636-9. 
  23. ↑ Sugimori, Masato; Fukuoka, Hiroshi; Imoto, Hideo; Saito, Taro (October 2000). "Preparation and crystal structure of chromium silicon selenide containing a B12 icosahedron with a tunnel structure" (in en). Journal of Organometallic Chemistry 611 (1–2): 547–550. doi:10.1016/S0022-328X(00)00407-1. https://linkinghub.elsevier.com/retrieve/pii/S0022328X00004071. 
  24. ↑ 24.0 24.1 Adeniji, Shola E.; Belik, Alexei A.; Mori, Takao; Fokwa, Boniface P. T. (2025-03-25). "Opening the Hysteresis Loop in MAB Magnets: Experimental and Computational Studies of CrMn 4 SiB 2 and Mo 0.8 Mn 4.2 SiB 2" (in en). Chemistry of Materials 37 (6): 2349–2357. doi:10.1021/acs.chemmater.5c00187. ISSN 0897-4756. https://pubs.acs.org/doi/10.1021/acs.chemmater.5c00187. 
  25. ↑ Zhang, F.X.; Sato, A.; Tanaka, T. (March 2002). "A New Boron-Rich Compound in the Y–B–Si Ternary System" (in en). Journal of Solid State Chemistry 164 (2): 361–366. doi:10.1006/jssc.2001.9508. Bibcode: 2002JSSCh.164..361Z. https://linkinghub.elsevier.com/retrieve/pii/S0022459601995088. 
  26. ↑ Higashi, Iwami; Tanaka, Takaho; Kobayashi, Kimiko; Ishizawa, Yoshio; Takami, Michio (October 1997). "Crystal Structure of YB41Si1.2" (in en). Journal of Solid State Chemistry 133 (1): 11–15. doi:10.1006/jssc.1997.7307. https://linkinghub.elsevier.com/retrieve/pii/S0022459697973072. 
  27. ↑ 27.0 27.1 27.2 27.3 27.4 27.5 27.6 27.7 27.8 Zhang, F.X.; Xu, F.F.; Mori, T.; Liu, Q.L.; Tanaka, T. (January 2003). "Novel rare-earth borosilicide RE1−xB12Si3.3−δ (RE=Y, Gd–Lu) (0⩽x⩽0.5, δ≈0.3): synthesis, crystal growth, structure analysis and properties" (in en). Journal of Solid State Chemistry 170 (1): 75–81. doi:10.1016/S0022-4596(02)00025-7. https://linkinghub.elsevier.com/retrieve/pii/S0022459602000257. 
  28. ↑ 28.0 28.1 Tanaka, Takaho; Sato, Akira; Zhang, FuXiang (2009-06-01). "Structure refinement of quaternary RE-B-C-Si compounds: Y 3− x (B 12 ) 3 (CSi)Si 8 (x ≈ 0.96) and Dy 3− x (B 12 ) 3 (CSi)Si 8 (x ≈ 0.90)". Journal of Physics: Conference Series 176. doi:10.1088/1742-6596/176/1/012015. ISSN 1742-6596. https://iopscience.iop.org/article/10.1088/1742-6596/176/1/012015. 
  29. ↑ 29.0 29.1 29.2 29.3 29.4 Roger, Jérome; Babizhetskyy, Volodymyr; Cordier, Stéphane; Bauer, Josef; Hiebl, Kurt; Le Pollès, Laurent; Elisabeth Ashbrook, Sharon; Halet, Jean-François et al. (June 2005). "Crystal structures, physical properties and NMR experiments on the ternary rare-earth metal silicide boride compounds RE5Si2B8 (RE=Y, Sm, Gd, Tb, Dy, Ho)" (in en). Journal of Solid State Chemistry 178 (6): 1851–1863. doi:10.1016/j.jssc.2005.02.023. https://linkinghub.elsevier.com/retrieve/pii/S0022459605000861. 
  30. ↑ 30.0 30.1 30.2 Fukuma, M.; Kawashima, K.; Akimitsu, J. (2012). "Superconducting state in (W, Ta)5SiB2" (in en). Physics Procedia 27: 48–51. doi:10.1016/j.phpro.2012.03.407. https://linkinghub.elsevier.com/retrieve/pii/S1875389212008231. 
  31. ↑ Brauner, A.; Nunes, C.A.; Bortolozo, A.D.; Rodrigues, G.; Machado, A.J.S. (March 2009). "Superconductivity in the new Nb5Si3−xBx phase" (in en). Solid State Communications 149 (11–12): 467–470. doi:10.1016/j.ssc.2008.12.037. https://linkinghub.elsevier.com/retrieve/pii/S0038109808007461. 
  32. ↑ 32.0 32.1 Chong, He; Wang, Chaobo; Chen, Zhaohui; Zhao, Ni; Guo, Hongyun; Ma, Xiaobai; Chen, Dongfeng; Sun, Kai et al. (September 2025). "Out-of-plane ordered quaternary borides M'4VSiB2 (M'=Nb and Mo): Experimental and theoretical investigations" (in en). Journal of Materials Science & Technology 228: 234–240. doi:10.1016/j.jmst.2024.11.066. https://linkinghub.elsevier.com/retrieve/pii/S1005030225000313. 
  33. ↑ 33.0 33.1 33.2 Halim, Joseph; Helmer, Pernilla; Palisaitis, Justinas; Dahlqvist, Martin; Thörnberg, Jimmy; Persson, Per O. Å.; Rosen, Johanna (2023-04-10). "Experimental and Theoretical Investigations of Out-of-Plane Ordered Nanolaminate Transition Metal Borides: M 4 CrSiB 2 (M = Mo, W, Nb)" (in en). Inorganic Chemistry 62 (14): 5341–5347. doi:10.1021/acs.inorgchem.2c03729. ISSN 0020-1669. PMID 36988625. 
  34. ↑ Rawn, C.J; Schneibel, J.H; Hoffmann, C.M; Hubbard, C.R (March 2001). "The crystal structure and thermal expansion of Mo5SiB2" (in en). Intermetallics 9 (3): 209–216. doi:10.1016/S0966-9795(00)00113-8. https://linkinghub.elsevier.com/retrieve/pii/S0966979500001138. 
  35. ↑ Alam, Mohammad S.; Shafirovich, Evgeny (2015). "Mechanically activated combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications" (in en). Proceedings of the Combustion Institute 35 (2): 2275–2281. doi:10.1016/j.proci.2014.05.019. Bibcode: 2015PComI..35.2275A. https://linkinghub.elsevier.com/retrieve/pii/S1540748914000224. 
  36. ↑ Machado, A.J.S.; Costa, A.M.S.; Nunes, C.A.; dos Santos, C.A.M.; Grant, T.; Fisk, Z. (October 2011). "Superconductivity in Mo5SiB2" (in en). Solid State Communications 151 (20): 1455–1458. doi:10.1016/j.ssc.2011.07.005. https://linkinghub.elsevier.com/retrieve/pii/S0038109811003462. 
  37. ↑ Dahlqvist, Martin; Zhou, Jie; Persson, Ingemar; Ahmed, Bilal; Lu, Jun; Halim, Joseph; Tao, Quanzheng; Palisaitis, Justinas et al. (September 2021). "Out-Of-Plane Ordered Laminate Borides and Their 2D Ti-Based Derivative from Chemical Exfoliation" (in en). Advanced Materials 33 (38). doi:10.1002/adma.202008361. ISSN 0935-9648. PMID 34350624. Bibcode: 2021AdM....3308361D. 
  38. ↑ Hübner, Julia-Maria; Jung, Walter; Koželj, Primož; Bobnar, Matej; Cardoso-Gil, Raul; Burkhardt, Ulrich; Böhme, Bodo; Baitinger, Michael et al. (2021-02-11). "Mastering extreme size constraints in the clathrate-I borosilicide Cs 8 B 8 Si 38" (in en). Zeitschrift für anorganische und allgemeine Chemie 647 (2–3): 119–125. doi:10.1002/zaac.202000400. ISSN 0044-2313. https://onlinelibrary.wiley.com/doi/10.1002/zaac.202000400. 
  39. ↑ Babizhetskyy, Volodymyr; Kremer, Reinhard K.; Jardin, Régis; Gautier, Régis; Fontaine, Bruno; Halet, Jean-François (December 2023). "Boron-induced phase transformation of ternary cerium boron silicides" (in en). Solid State Sciences 146. doi:10.1016/j.solidstatesciences.2023.107378. Bibcode: 2023SSSci.14607378B. https://linkinghub.elsevier.com/retrieve/pii/S1293255823002704. 
  40. ↑ Mori, T; Zhang, F (2002-11-18). "Low-temperature magnetism of the compound GdB 18 Si 5". Journal of Physics: Condensed Matter 14 (45): 11831–11836. doi:10.1088/0953-8984/14/45/324. ISSN 0953-8984. https://iopscience.iop.org/article/10.1088/0953-8984/14/45/324. 
  41. ↑ Babizhetskyy, Volodymyr; Roger, Jérome; Députier, Stéphanie; Guérin, Roland; Jardin, Régis; Bauer, Josef; Hiebl, Kurt; Jardin, Christophe et al. (2004-04-02). "Gd 5 Si 2 B 8: A Ternary Rare-Earth-Metal Silicide Boride Compound" (in en). Angewandte Chemie International Edition 43 (15): 1979–1983. doi:10.1002/anie.200352468. ISSN 1433-7851. PMID 15065279. https://onlinelibrary.wiley.com/doi/10.1002/anie.200352468. 
  42. ↑ Yuan, Jinshi; Zhang, Han; Tang, Jie; Shinya, Norio; Lin, Yuexian; Qin, Lu-Chang (February 2013). "Synthesis and characterization of single crystalline GdB44Si2 nanostructures" (in en). Journal of Materials Science 48 (4): 1555–1561. doi:10.1007/s10853-012-6911-3. ISSN 0022-2461. Bibcode: 2013JMatS..48.1555Y. http://link.springer.com/10.1007/s10853-012-6911-3. 
  43. ↑ Babizhetskyy, Volodymyr; Roger, Jérome; Députier, Stéphanie; Guérin, Roland; Jardin, Régis; Bauer, Josef; Hiebl, Kurt; Jardin, Christophe et al. (2004-04-02). "Gd 5 Si 2 B 8: A Ternary Rare-Earth-Metal Silicide Boride Compound" (in en). Angewandte Chemie International Edition 43 (15): 1979–1983. doi:10.1002/anie.200352468. ISSN 1433-7851. PMID 15065279. https://onlinelibrary.wiley.com/doi/10.1002/anie.200352468. 
  44. ↑ 44.0 44.1 Babizhetskyy, V; Roger, J; Députier, S; Jardin, R; Bauer, J; Guérin, R (February 2004). "Solid state phase equilibria in the Gd–Si–B system at 1270K" (in en). Journal of Solid State Chemistry 177 (2): 415–424. doi:10.1016/j.jssc.2003.02.011. Bibcode: 2004JSSCh.177..415B. https://linkinghub.elsevier.com/retrieve/pii/S0022459603004390. 
  45. ↑ Mori, Takao; Tanaka, Takaho (October 2000). "Specific Heat of Antiferromagnetic-like TbB41Si1.2, a B12 Icosahedral Boron-Rich Compound" (in en). Journal of Solid State Chemistry 154 (1): 223–228. doi:10.1006/jssc.2000.8839. https://linkinghub.elsevier.com/retrieve/pii/S002245960098839X. 
  46. ↑ 46.0 46.1 Babizhetskyy, Volodymyr; Levytskyi, Volodymyr; Jardin, Régis; Bauer, Josef; Guérin, Roland; Gautier, Régis; Fontaine, Bruno; Halet, Jean-François (2020-07-31). "Rare-earth Metal Borosilicides R 9 Si 15– x B 3 ( R = Tb, Yb): New Ordered Structures Derived from the AlB 2 Structure Type" (in en). Zeitschrift für anorganische und allgemeine Chemie 646 (14): 1168–1175. doi:10.1002/zaac.202000046. ISSN 0044-2313. https://onlinelibrary.wiley.com/doi/10.1002/zaac.202000046. 
  47. ↑ Salvador, James R.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G. (2002-03-01). "Gallium Flux Synthesis of Tb3−xC2Si8(B12)3: A Novel Quaternary Boron-Rich Phase Containing B12 Icosahedra Financial support from the Department of Energy (Grant # DE-FG02-99ER45793) is gratefully acknowledged. Part of this work was carried out at the Center for Advanced Microscopy at Michigan State University.". Angewandte Chemie International Edition 41 (5): 844–846. doi:10.1002/1521-3773(20020301)41:5<844::AID-ANIE844>3.0.CO;2-R. PMID 12491355. https://onlinelibrary.wiley.com/doi/10.1002/1521-3773(20020301)41:53.0.CO;2-R. 
  48. ↑ Salvador, James R.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G. (2002-03-01). "Gallium Flux Synthesis of Tb3−xC2Si8(B12)3: A Novel Quaternary Boron-Rich Phase Containing B12 Icosahedra Financial support from the Department of Energy (Grant # DE-FG02-99ER45793) is gratefully acknowledged. Part of this work was carried out at the Center for Advanced Microscopy at Michigan State University.". Angewandte Chemie International Edition 41 (5): 844–846. doi:10.1002/1521-3773(20020301)41:5<844::AID-ANIE844>3.0.CO;2-R. PMID 12491355. https://onlinelibrary.wiley.com/doi/10.1002/1521-3773(20020301)41:53.0.CO;2-R. 
  49. ↑ Zhang, F. X.; Tanaka, T. (December 2003). "Crystal structure of dysprosium borosilicide ,Dy0.7Bi2.33Si3". Zeitschrift für Kristallographie - New Crystal Structures 218 (JG): 26. doi:10.1524/ncrs.2003.218.jg.26. ISSN 2197-4578. https://www.degruyter.com/document/doi/10.1524/ncrs.2003.218.jg.26/html. 
  50. ↑ Jardin, R.; Babizhetskyy, V.; Guérin, R.; Bauer, J. (April 2003). "Crystal structure of the rare earth borosilicide Er8Si17B3" (in en). Journal of Alloys and Compounds 353 (1–2): 233–239. doi:10.1016/S0925-8388(02)01318-X. https://linkinghub.elsevier.com/retrieve/pii/S092583880201318X. 
  51. ↑ Mori, Takao; Tanaka, Takaho (January 2003). "Single crystal growth and physical properties of boron-rich ytterbium borosilicide" (in en). Journal of Alloys and Compounds 348 (1–2): 203–207. doi:10.1016/S0925-8388(02)00832-0. https://linkinghub.elsevier.com/retrieve/pii/S0925838802008320. 
  52. ↑ Cai, G.M.; Zheng, F.; Yi, D.Q.; Chen, H.M.; Zhou, S.X.; Long, Z.H.; Jin, Z.P. (April 2010). "Experimental investigation and thermodynamic modeling of Hf–Si–B system" (in en). Journal of Alloys and Compounds 494 (1–2): 148–154. doi:10.1016/j.jallcom.2010.01.050. https://linkinghub.elsevier.com/retrieve/pii/S0925838810000836. 
  53. ↑ Fukuma, Michinori; Kawashima, Kenji; Maruyama, Masaki; Akimitsu, Jun (2011-02-15). "Superconductivity in W 5 SiB 2 with the T 2 Phase Structure" (in en). Journal of the Physical Society of Japan 80 (2). doi:10.1143/JPSJ.80.024702. ISSN 0031-9015. https://journals.jps.jp/doi/10.1143/JPSJ.80.024702. 

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