Engineering:Gummel–Poon model
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The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in an article published by Hermann Gummel and H. C. Poon at Bell Labs in 1970.[1]
The Gummel–Poon model and modern variants of it are widely used in popular circuit simulators such as SPICE. A significant effect that the Gummel–Poon model accounts for is the variation of the transistor [math]\displaystyle{ \beta_\text{F} }[/math] and [math]\displaystyle{ \beta_\text{R} }[/math] values with the direct current level. When certain parameters are omitted, the Gummel–Poon model reduces to the simpler Ebers–Moll model.[1]
Model parameters
Spice Gummel–Poon model parameters[2]
# | Name | Property modeled |
Parameter | Units | Default value |
---|---|---|---|---|---|
1 | IS | current | transport saturation current | A | 1×10−16 |
2 | BF | current | ideal max. forward beta | — | 100 |
3 | NF | current | forward-current emission coefficient | — | 1 |
4 | VAF | current | forward early voltage | V | ∞ |
5 | IKF | current | corner for forward-beta high-current roll-off | A | ∞ |
6 | ISE | current | B–E leakage saturation current | A | 0 |
7 | NE | current | B–E leakage emission coefficient | — | 1.5 |
8 | BR | current | ideal max. reverse beta | — | 1 |
9 | NR | current | reverse-current emission coefficient | — | 1 |
10 | VAR | current | reverse early voltage | V | ∞ |
11 | IKR | current | corner for reverse-beta high-current roll-off | A | ∞ |
12 | ISC | current | B–C leakage saturation current | A | 0 |
13 | NC | current | B–C leakage emission coefficient | — | 2 |
14 | RB | resistance | zero-bias base resistance | Ω | 0 |
15 | IRB | resistance | current where base resistance falls half-way to its minimum | A | ∞ |
16 | RBM | resistance | minimum base resistance at high currents | Ω | RB |
17 | RE | resistance | emitter resistance | Ω | 0 |
18 | RC | resistance | collector resistance | Ω | 0 |
19 | CJE | capacitance | B–E zero-bias depletion capacitance | F | 0 |
20 | VJE | capacitance | B–E built-in potential | V | 0.75 |
21 | MJE | capacitance | B–E junction exponential factor | — | 0.33 |
22 | TF | capacitance | ideal forward transit time | s | 0 |
23 | XTF | capacitance | coefficient for bias dependence of TF | — | 0 |
24 | VTF | capacitance | voltage describing VBC dependence of TF | V | ∞ |
25 | ITF | capacitance | high-current parameter for effect on TF | A | 0 |
26 | PTF | excess phase at frequency = 1/(2π TF) | ° | 0 | |
27 | CJC | capacitance | B–C zero-bias depletion capacitance | F | 0 |
28 | VJC | capacitance | B–C built-in potential | V | 0.75 |
29 | MJC | capacitance | B–C junction exponential factor | — | 0.33 |
30 | XCJC | capacitance | fraction of B–C depletion capacitance connected to internal base node | — | 1 |
31 | TR | capacitance | ideal reverse transit time | s | 0 |
32 | CJS | capacitance | zero-bias collector–substrate capacitance | F | 0 |
33 | VJS | capacitance | substrate–junction built-in potential | V | 0.75 |
34 | MJS | capacitance | substrate–junction exponential factor | — | 0 |
35 | XTB | forward- and reverse-beta temperature exponent | — | 0 | |
36 | EG | energy gap for temperature effect of IS | eV | 1.1 | |
37 | XTI | temperature exponent for effect of IS | — | 3 | |
38 | KF | flicker-noise coefficient | — | 0 | |
39 | AF | flicker-noise exponent | — | 1 | |
40 | FC | coefficient for forward-bias depletion capacitance formula | — | 0.5 | |
41 | TNOM | parameter measurement temperature | °C | 27 |
See also
References
- ↑ 1.0 1.1 H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors", Bell Syst. Tech. J., vol. 49, pp. 827–852, May–June 1970.
- ↑ Summary of model with schematics and equations.
External links
- Bell System Technical Journal, v49: i5 May-June 1970 on archive.org
- Designers-Guide.org comparison paper Xiaochong Cao, J. McMacken, K. Stiles, P. Layman, Juin J. Liou, Adelmo Ortiz-Conde, and S. Moinian, "Comparison of the New VBIC and Conventional Gummel–Poon Bipolar Transistor Models," IEEE Trans-ED 47 #2, Feb. 2000.
de:Ersatzschaltungen des Bipolartransistors#Gummel-Poon-Modell
Original source: https://en.wikipedia.org/wiki/Gummel–Poon model.
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