Engineering:Stress-induced leakage current
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Short description: Increase in gate leakage current of MOSFETs
Stress-induced leakage current (SILC) is an increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide during electrical stressing.[1][2] SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices.
Oxide defects
References
- ↑ Ossaimee, M.I. (January 1, 2013). "Stress-induced leakage current in CNT-MOSFETs using simplified quantitative model" (in en). Electronics Letters 49 (3): 222–223. doi:10.1049/el.2012.3847. ISSN 1350-911X. Bibcode: 2013ElL....49..222O. https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2012.3847.
- ↑ Pantisano, L.; Cheung, K.P. (August 7, 2002). "Stress-induced leakage current (SILC) and oxide breakdown: are they from the same oxide traps?". IEEE Transactions on Device and Materials Reliability 1 (2): 109–112. doi:10.1109/7298.956704.
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