Physics:Hydrogen silsesquioxane
200px|thumbnail|right| Hydrogen silsesquioxane (R = H).
Hydrogen silsesquioxane(s) (HSQ, H-SiOx, THn, H-resin) are inorganic compounds with the empirical formula [HSiO3/2]n. The cubic H8Si8O12 (TH8) is used as the visual representation for HSQ. TH8, TH10, TH12, and TH14 have been characterized by EA), gas chromatography–mass spectroscopy (GC-MS), IR spectroscopy, and NMR spectroscopy .[1]
High purity semiconductor-grade HSQ has been investigated as a negative resist in photolithography and electron-beam (e-beam) lithography.[2] HSQ is commonly delivered in methyl isobutyl ketone (MIBK) and can be used to form 0.01–2 µm films on substrates/wafers. When exposed to electrons or extreme ultraviolet radiation (EUV), HSQ cross-links via hydrogen evolution concomitant with Si-O bond crosslinking. Recently, the possibility of crosslinking HSQ using ultrashort laser pulses through multiphoton absorption and its application to 3D printing of silica glass have been demonstrated.[3][4] Sufficiently dosed and exposed regions form a low dielectric constant (low-k) Si rich oxide that is chemically resistant/insoluble towards developers, such as tetramethylammonium hydroxide (TMAH). Sub-10 nm patterning is achievable with HSQ. The nanoscale patterning capabilities and low-k of the Si rich oxide produced is potentially of broad scope of nano applications and devices.[5]
HSQ has been available as 1 and 6% (wt%) MIBK solutions from Dow Inc. (Formally Dow Corning), called XR-1541-001 and XR-1541-006, respectively. HSQ in MIBK has a short shelf life. Alternatively, Applied Quantum Materials Inc. (AQM) produces HSQ with a longer shelf life.[6],[7] AQM HSQ solutions are available in the United States from DisChem, Inc.
Further reading
- Chen, Huiping; Tecklenburg, Ron E. (October 2006). "Characterization of low and intermediate molecular weight hydrogen silsesquioxanes by mass spectrometry". Journal of the American Society for Mass Spectrometry 17 (10): 1438–1441. doi:10.1016/j.jasms.2006.06.010. ISSN 1044-0305. PMID 16872839.
- Frye, Cecil L.; Collins, Ward T. (1970-09-01). "Oligomeric silsesquioxanes, (HSiO3/2)n". Journal of the American Chemical Society 92 (19): 5586–5588. doi:10.1021/ja00722a009. ISSN 0002-7863. https://doi.org/10.1021/ja00722a009.
References
- ↑ Agaskar, P. A.; Day, V. W.; Klemperer, W. G. (1987-09-01). "A new route to trimethylsilylated spherosilicates. Synthesis and structure of [Si12O18(OSiMe3)12, D3h-[Si14O21](OSiMe3)14, and C2v-[Si14O21](OSiMe3)14"]. Journal of the American Chemical Society 109 (18): 5554–5556. doi:10.1021/ja00252a058. ISSN 0002-7863. https://doi.org/10.1021/ja00252a058.
- ↑ Namatsu, H.; Yamaguchi, T.; Nagase, M.; Yamazaki, K.; Kurihara, K. (1998-03-01). "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations" (in en). Microelectronic Engineering. International Conference on Micro- and Nanofarbication 41-42: 331–334. doi:10.1016/S0167-9317(98)00076-8. ISSN 0167-9317. https://www.sciencedirect.com/science/article/pii/S0167931798000768.
- ↑ Jin, Feng; Liu, Jie; Zhao, Yuan-Yuan; Dong, Xian-Zi; Zheng, Mei-Ling; Duan, Xuan-Ming (2022-03-15). "λ/30 inorganic features achieved by multi-photon 3D lithography" (in en). Nature Communications 13 (1). doi:10.1038/s41467-022-29036-7. ISSN 2041-1723. PMID 35292637. PMC 8924217. https://www.nature.com/articles/s41467-022-29036-7.
- ↑ Huang, Po-Han; Laakso, Miku; Edinger, Pierre; Hartwig, Oliver; Duesberg, Georg S.; Lai, Lee-Lun; Mayer, Joachim; Nyman, Johan et al. (2023-06-07). "Three-dimensional printing of silica glass with sub-micrometer resolution" (in en). Nature Communications 14 (1). doi:10.1038/s41467-023-38996-3. ISSN 2041-1723. PMID 37280208. PMC 10244462. https://www.nature.com/articles/s41467-023-38996-3.
- ↑ Chen, Yifang (2015-03-05). "Nanofabrication by electron beam lithography and its applications: A review" (in en). Microelectronic Engineering 135: 57–72. doi:10.1016/j.mee.2015.02.042. ISSN 0167-9317. https://www.sciencedirect.com/science/article/pii/S016793171500101X.
- ↑ Shen, Jiashi; Aydinoglu, Ferhat; Soltani, Mohammad; Cui, Bo (2019-03-01). "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life". Journal of Vacuum Science & Technology B 37 (2): 021601. doi:10.1116/1.5079657. ISSN 2166-2746. https://avs.scitation.org/doi/abs/10.1116/1.5079657.
- ↑ Jiashi, Shen (2018-09-28) (in en). E-beam Lithography using Dry Powder HSQ Resist Having Long Shelf Life and Nanogap Electrode Fabrication. https://uwspace.uwaterloo.ca/handle/10012/13962.
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