Physics:Voigt-Thomson law

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Voigt-Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:[1]

[math]\displaystyle{ \rho (\vartheta) = \rho_0 + \Delta \rho \cdot cos^2 \vartheta }[/math]

where:

[math]\displaystyle{ \vartheta \ }[/math] is the angle of direction of current in relation to the direction of magnetic field
[math]\displaystyle{ \rho_0 \ }[/math] is the initial resistivity
[math]\displaystyle{ \Delta \rho \ }[/math] is the change of resistivity (proportional to MR ratio)

The equation can also be expressed as:[2]

[math]\displaystyle{ \rho (\vartheta) = \rho_\parallel \cdot cos^2 \vartheta + \rho_\perp \cdot sin^2 \vartheta }[/math]

where:

[math]\displaystyle{ \rho_\parallel \ }[/math] is the parallel component of resistivity
[math]\displaystyle{ \rho_\perp\ }[/math] is the perpendicular component

References

  1. Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics 91 (10): 7532–7534. doi:10.1063/1.1447875. Bibcode2002JAP....91.7532N. 
  2. Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences (Harrison and Son). ISSN 0962-8444. https://books.google.com/books?id=iboOAAAAIAAJ. Retrieved 2015-07-19.