Engineering:TO-126
TO-126 is a type of semiconductor package for devices with three pins, such as transistors.[1] The package is rectangular with a hole in the middle to allow for easy mounting to a board or a heat sink. On one side of the package typically a metal sheet is exposed, with the transistor die bonded to the other side of the metal sheet inside the package.[2] This allows for an efficient heat transfer from the transistor die to an external heat sink but also implies that the metal sheet is electrically connected to the die (for a bipolar junction transistor usually the collector is connected to this metal sheet).
History and origin
The JEDEC TO-126 descriptor is derived from the original full name for the package: Transistor Outline Package, Case Style 126.[3] In the updated JEDEC outline system, the package is numbered as TO-225AA.[2]
STMicroelectronics refers to this package style as SOT-32.[4]
National Standards
![](/wiki/images/thumb/2/21/Transistorer_%28cropped%29.jpg/250px-Transistorer_%28cropped%29.jpg)
Standards organization | Standard | Designation for TO-126 |
---|---|---|
JEDEC | JEP95[5] | TO-225AA |
IEC | IEC 60191[6] | A56 |
DIN | DIN 41869[7] | 12A3 |
Gosstandart | GOST 18472—88[8] | KT-27[lower-alpha 1] |
Rosstandart | GOST R 57439—2017[9] | |
Kombinat Mikroelektronik Erfurt | TGL 11811[6] | N |
TGL 26713/09[6] | H1B |
See also
- TO-66, a metal package with similar power ratings
- TO-220, a plastic package with higher power ratings
References
- ↑ BD135; BD137; BD139; NPN power transistors, Philips Semiconductors, 1999, http://pdf.datasheetcatalog.com/datasheet/philips/BD139-16.pdf, retrieved 2013-12-09
- ↑ 2.0 2.1 Bill Roehr (2001), AN1040/D: Mounting Considerations For Power Semiconductors, On Semiconductor, http://www.onsemi.com/pub_link/Collateral/AN1040-D.PDF, retrieved 2014-01-25
- ↑ "JEDEC TO-126 package specification". May 1968. Archived from the original on June 18, 2017. https://web.archive.org/web/20170618133915/https://www.jedec.org/sites/default/files/docs/archive/to/to-126.pdf.
- ↑ MJE340 MJE350 Complementary silicon power transistors, STMicroelectronics, https://www.st.com/resource/en/datasheet/mje350.pdf
- ↑ "TO-225". JEDEC. http://www.jedec.org/sites/default/files/docs/archive/to/to-225.pdf.
- ↑ 6.0 6.1 6.2 "TGL 26713/09: Gehäuse für Halbleiterbauelemente - Bauform H" (in de). Verlag für Standardisierung. June 1988. https://www.bbr-server.de/bauarchivddr/archiv/tglarchiv/tgl20001bis30000/tgl26501bis27000/tgl-26713-9-jun-1988.pdf. Retrieved 2021-06-15.
- ↑ "NPN Silicon Transistors BD135 BD137 BD139". Siemens. https://datasheet.datasheetarchive.com/originals/scans/Scans-101/DSAIHSC000147810.pdf. Retrieved 2021-08-20.
- ↑ "ГОСТ 18472—88 ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" (in ru). Rosstandart. 1988. p. 56. https://files.stroyinf.ru/Data2/1/4294834/4294834701.pdf.
- ↑ "ГОСТ Р 57439—2017 ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" (in ru). Gosstandart. 2017. p. 70-71. https://files.stroyinf.ru/Data/644/64413.pdf.
External links
- TO-126 Package, EESemi.com
![]() | Original source: https://en.wikipedia.org/wiki/TO-126.
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