FJG RAM
| Computer memory types |
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| Volatile |
| RAM |
| Historical |
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| Non-volatile |
| ROM |
| NVRAM |
| Early stage NVRAM |
| Magnetic |
| Optical |
| In development |
| Historical |
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FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented and subsequently patented in July 2009 by Oriental Semiconductor Electronics, Ltd.[1][2]
The FJG RAM, according to Oriental Semiconductor researchers has an ultra-compact cell area of 4-5F2 (F refers to feature size) and a capacitor-less cell configuration. The FJG RAM can be produced in existing standard DRAM fabs. Due to the absence of a capacitor, the FJG cell process is more compatible with logic processes, allowing its use in standalone DRAM applications as well as embedded-DRAM applications. Other properties include non-destructive-read and the possibility for DRAM designers to use shared sense amplifiers to reduce the complexity of peripheral circuits.[2]
As of July 2023, there is little evidence of ongoing development or near-term commercialization efforts.
References
- ↑ "Emerging Memory Technologies - VLSI Tutorials - Mepits" (in en). https://www.mepits.com/tutorial/261/vlsi/emerging-memory-technologies.
- ↑ 2.0 2.1 Wang, Pang-Fei. "Capacitorless Dram Cell With Floating Junction Gate" (in en). http://www.growthconsulting.frost.com/web/images.nsf/0/B404F0C606E8D8ED6525776C001CE18D/$File/ElecAug10TI1.htm.
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