PLEDM
From HandWiki
PLEDM (Phase-state Low Electron (hole)-number Drive Memory) is a type of memory chip, developed in 1999 at Hitachi's laboratory at the University of Cambridge. PLEDM is based on PLEDTR technology.[1]
Features
- nonvolatile memory
- read/write time less than 10 nanoseconds
- one transistor for each memory cell
- reduced power consumption[2]
References
- ↑ Cambridge Hitachi Corporate Technology Group- PLEDM
- ↑ IEEE description: [1][yes|permanent dead link|dead link}}]
External links
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