Physics:Electron-longitudinal acoustic phonon interaction

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The electron-longitudinal acoustic phonon interaction is an interaction that can take place between an electron and a longitudinal acoustic (LA) phonon in a material such as a semiconductor.

Displacement operator of the LA phonon

The equations of motion of the atoms of mass M which locates in the periodic lattice is

Md2dt2un=−k0(un−1+un+1−2un),

where un is the displacement of the nth atom from their equilibrium positions.

Defining the displacement uℓ of the ℓth atom by uℓ=xℓ−ℓa, where xℓ is the coordinates of the ℓth atom and a is the lattice constant,

the displacement is given by ul=Aei(qℓa−ωt)

Then using Fourier transform:

Qq=1N∑ℓuℓe−iqaℓ

and

uℓ=1N∑qQqeiqaℓ.

Since uℓ is a Hermite operator,

uℓ=12N∑q(Qqeiqaℓ+Qq†e−iqaℓ)

From the definition of the creation and annihilation operator aq†=q2Mℏωq(MωqQ−q−iPq),aq=q2Mℏωq(MωqQ−q+iPq)

Qq is written as
Qq=ℏ2Mωq(a−q†+aq)

Then uℓ expressed as

uℓ=∑qℏ2MNωq(aqeiqaℓ+aq†e−iqaℓ)

Hence, using the continuum model, the displacement operator for the 3-dimensional case is

u(r)=∑qℏ2MNωqeq[aqeiq⋅r+aq†e−iq⋅r],

where eq is the unit vector along the displacement direction.

Interaction Hamiltonian

The electron-longitudinal acoustic phonon interaction Hamiltonian is defined as Hel

Hel=DacδVV=Dacdivu(r),

where Dac is the deformation potential for electron scattering by acoustic phonons.[1]

Inserting the displacement vector to the Hamiltonian results to

Hel=Dac∑qℏ2MNωq(ieq⋅q)[aqeiq⋅r−aq†e−iq⋅r]

Scattering probability

The scattering probability for electrons from |k⟩ to |k′⟩ states is

P(k,k′)=2πℏ∣⟨k′,q′|Hel| k,q⟩∣2δ[ε(k′)−ε(k)∓ℏωq]
=2πℏ|Dac∑qℏ2MNωq(ieq⋅q)nq+12∓121L3∫d3ruk′∗(r)uk(r)ei(k−k′±q)⋅r|2δ[ε(k′)−ε(k)∓ℏωq]

Replace the integral over the whole space with a summation of unit cell integrations

P(k,k′)=2πℏ(Dac∑qℏ2MNωq|q|nq+12∓12I(k,k′)δk′,k±q)2δ[ε(k′)−ε(k)∓ℏωq],

where I(k,k′)=Ω∫Ωd3ruk′∗(r)uk(r), Ω is the volume of a unit cell.

P(k,k′)={2πℏDac2ℏ2MNωq|q|2nq(k′=k+q;absorption),2πℏDac2ℏ2MNωq|q|2(nq+1)(k′=k−q;emission).

See also

Notes

  1. ↑ Hamaguchi, Chihiro (2017). Basic Semiconductor Physics. Graduate Texts in Physics (3 ed.). Springer. p. 292. doi:10.1007/978-3-319-66860-4. ISBN 978-3-319-88329-8. Bibcode: 2017bsp..book.....H. https://www.springer.com/gp/book/9783319668598. 

References