Category:Semiconductor devices: Difference between revisions

D

• Semiconductor device fabrication‎ (4 C, 161 P)
• Diodes‎ (1 C, 48 P)

F

• Field-programmable gate arrays‎ (7 P)

I

• Integrated circuits‎ (9 C, 198 P)

S

• Semiconductor device defects‎ (19 P)
• Solar cells‎ (3 C, 59 P)

T

• Transistors‎ (2 C, 25 P)

• Physics:Semiconductor device

A

• AAL1gator

B

• Physics:Bifacial solar cells

C

• Engineering:Chiplet

D

• Engineering:Digital micromirror device
• Engineering:Diode
• Engineering:Dye-and-pry

E

• Engineering:Embedded instrumentation

F

• Engineering:Field effect tetrode
• Engineering:Field-effect tetrode
• Engineering:Field-programmable gate array
• Engineering:Fin field-effect transistor
• Engineering:FinFET

G

• Physics:Gate oxide
• Engineering:General Micro-electronics
• Engineering:General Microelectronics
• Engineering:GgNMOS

H

• Haitz's law

I

• Engineering:Integrated circuit
• Engineering:Interband cascade laser
• Physics:Intermediate band photovoltaics
• Engineering:ISPSD

M

• Engineering:Metal rectifier
• Engineering:Micromirror device
• Engineering:MOS composite static induction thyristor
• Engineering:MOSFET
• Engineering:List of MOSFET applications
• Engineering:MOSFET applications
• Physics:Multi-junction solar cell

N

• Physics:Non linear piezoelectric effects in polar semiconductors

O

• Engineering:Opto-isolator
• Engineering:Oscillistor
• Engineering:Oxide thin-film transistor

P

• Engineering:P–n diode
• Engineering:Piezotronics
• Engineering:Polysilicon depletion effect
• Engineering:Position sensitive device
• Engineering:Power semiconductor device
• Engineering:Proper zero-signal collector current

R

• Engineering:Resistive opto-isolator

S

• Physics:Shockley–Queisser limit
• Engineering:Static induction thyristor
• Engineering:Static induction transistor
• Physics:Solaristor
• Engineering:Solid-state lighting
• Engineering:Stabistor

T

• Engineering:Trancitor
• Engineering:Transistor