Engineering:Tetrode transistor
From HandWiki
Short description: Transistor with four active terminals
A tetrode transistor is any transistor having four active terminals.
Early tetrode transistors
There were two types of tetrode transistor developed in the early 1950s as an improvement over the point-contact transistor and the later grown-junction transistor and alloy-junction transistor. Both offered much higher speed than earlier transistors.
- Point-contact transistor having two emitters.[1] It became obsolete in the mid-1950s.
- Modified grown-junction transistor or alloy-junction transistor having two connections at opposite ends of the base.[2] It achieved its high speed by reducing the input to output capacitance and base resistance.[3] It became obsolete in the early 1960s with the development of the diffusion transistor.
Modern tetrode transistors
- Dual-emitter transistor, used in two (or more) input transistor–transistor logic gates.[4][5]
- Dual-collector transistor, used in two-output integrated injection logic gates.[6]
- Diffused planar silicon bipolar junction transistor,[7] used in some integrated circuits. This transistor, apart from the three electrodes (emitter, base, and collector), has a fourth electrode or grid made of conducting material placed near the emitter-base junction from which it is insulated by a silica layer.
- Field-effect tetrode
See also
- Multigate transistor
- Pentode transistor
References
- ↑ , Robert T."Crystal tetrode" patent US2666150A, issued 1954-01-12
- ↑ Wolf, Oswald; R. T. Kramer; J. Spiech; H. Shleuder (1966). Special Purpose Transistors: A Self-Instructional Programmed Manual. Prentice Hall. pp. 98–102.
- ↑ Wallace, R. L.; Schimpf, L. G.; Dickten, E. (November 1952). "A Junction Transistor Tetrode for High-Frequency Use". Proceedings of the IRE 40 (11): 1395–1400. doi:10.1109/JRPROC.1952.273968. ISSN 2162-6634. https://ieeexplore.ieee.org/document/4050840/;jsessionid=EE280DC7E60D24CAB43D6608BB7C20AD.
- ↑ , Richard E. & Richard C. Sirrine"Transistor logic circuits" patent US3229119A, issued 1966-01-11
- ↑ Sylvania universal high level logic. U.S.A. May 1966. pp. 4. http://www.bitsavers.org/components/sylvania/SM2927_Sylvania_Universal_High_Level_Logic_May66.pdf.
- ↑ De Troye, N.C. (October 1974). "Integrated injection logic-present and future". IEEE Journal of Solid-State Circuits 9 (5): 206–211. doi:10.1109/JSSC.1974.1050504. ISSN 1558-173X. https://ieeexplore.ieee.org/document/1050504/;jsessionid=EC4695CCA6285B146856004253440B01.
- ↑ U.S. Patent 4,143,421 - Tetrode transistor memory logic cell, March 6, 1979. Filed September 6, 1977.
External links
- Some application aspects of the tetrode transistors PDF (point contact)
- The Tetrode Power Transistor PDF (alloy junction)
- TRANSISTOR MUSEUM Historic Transistor Photo Gallery WESTERN ELECTRIC 3N22 (grown junction)
 |  |
