Engineering:LDMOS

From HandWiki
Short description: Double-diffused MOSFET

LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,[2][3][4] enabling the majority of the world's cellular voice and data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.[6] Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include TSMC, LFoundry, Tower Semiconductor, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon.

Photo Gallery

Applications

Common applications of LDMOS technology include the following.

RF LDMOS

Common applications of RF LDMOS technology include the following.


See also

References

  1. Jump up to: 1.0 1.1 A. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
  2. Jump up to: 2.0 2.1 2.2 2.3 2.4 Baliga, Bantval Jayant (2005). Silicon RF Power MOSFETS. World Scientific. pp. 1–2. ISBN 9789812561213. https://books.google.com/books?id=StJpDQAAQBAJ&pg=PA1. 
  3. Jump up to: 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 Asif, Saad (2018). 5G Mobile Communications: Concepts and Technologies. CRC Press. p. 134. ISBN 9780429881343. https://books.google.com/books?id=yg1mDwAAQBAJ&pg=PT134. 
  4. Jump up to: 4.00 4.01 4.02 4.03 4.04 4.05 4.06 4.07 4.08 4.09 4.10 4.11 Theeuwen, S. J. C. H.; Qureshi, J. H. (June 2012). "LDMOS Technology for RF Power Amplifiers". IEEE Transactions on Microwave Theory and Techniques 60 (6): 1755–1763. doi:10.1109/TMTT.2012.2193141. ISSN 1557-9670. Bibcode2012ITMTT..60.1755T. https://www.ampleon.com/documents/published-paper/AMP-PP-2017-0503.pdf. 
  5. Jump up to: 5.00 5.01 5.02 5.03 5.04 5.05 5.06 5.07 5.08 5.09 5.10 "LDMOS Products and Solutions". https://www.nxp.com/products/rf/rf-power/ldmos-products-and-solutions:RF-LDMOS-Products-Sol. 
  6. van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Orlando, FL. pp. 69–72. doi:10.1109/RWS.2008.4463430. 
  7. Jump up to: 7.0 7.1 Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047. https://archive.org/details/highperfomanceau0000dunc/page/177. 
  8. "A 600W broadband HF amplifier using affordable LDMOS devices" (in en-GB). 2019-10-27. https://qrpblog.com/2019/10/a-600w-broadband-hf-amplifier-using-affordable-ldmos-devices/. 
  9. Jump up to: 9.0 9.1 9.2 "L-Band Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/l-band-radar:RF-AEROSPACE-DEFENSE-3. 
  10. Jump up to: 10.0 10.1 10.2 10.3 "Avionics". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/avionics:RF-AEROSPACE-DEFENSE-2. 
  11. Jump up to: 11.0 11.1 11.2 "RF Aerospace and Defense". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense:RF-AEROSPACE-DEFENSE-HOME. 
  12. Jump up to: 12.0 12.1 "Communications and Electronic Warfare". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/comm-and-electronic-warfare:RF-AEROSPACE-DEFENSE-5. 
  13. Jump up to: 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 "Mobile & Wideband Comms". https://www.st.com/en/radio-frequency-transistors/mobile-wideband-comms.html. 
  14. Jump up to: 14.0 14.1 14.2 14.3 14.4 14.5 "470-860 MHz – UHF Broadcast". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/470-860-mhz-uhf-broadcast:RF-INDUST-2. 
  15. Jump up to: 15.0 15.1 15.2 15.3 15.4 15.5 "RF LDMOS Transistors". https://www.st.com/en/radio-frequency-transistors/rf-ldmos-transistors.html. 
  16. Jump up to: 16.0 16.1 "28/32V LDMOS: IDDE technology boost efficiency & robustness". https://www.st.com/content/ccc/resource/sales_and_marketing/promotional_material/flyer/group0/37/ed/5c/aa/d6/c6/4a/71/flldmos11219_flyer/files/flldmos11219.pdf/jcr:content/translations/en.flldmos11219.pdf. 
  17. Jump up to: 17.0 17.1 17.2 17.3 17.4 17.5 "AN2048: Application note – PD54008L-E: 8 W - 7 V LDMOS in PowerFLAT packages for wireless meter reading applications". https://www.st.com/content/ccc/resource/technical/document/application_note/dc/43/d5/6e/39/5b/45/90/CD00044466.pdf/files/CD00044466.pdf/jcr:content/translations/en.CD00044466.pdf. 
  18. Jump up to: 18.00 18.01 18.02 18.03 18.04 18.05 18.06 18.07 18.08 18.09 18.10 "ISM & Broadcast". https://www.st.com/en/radio-frequency-transistors/ism-broadcast.html. 
  19. Jump up to: 19.0 19.1 19.2 19.3 "700-1300 MHz – ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/700-1300-mhz-ism:RF-INDUST-3. 
  20. Jump up to: 20.0 20.1 "2450 MHz – ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/2450-mhz-ism:RF-INDUST-4. 
  21. Jump up to: 21.0 21.1 21.2 21.3 21.4 21.5 21.6 21.7 "1-600 MHz – Broadcast and ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/1-600-mhz-broadcast-and-ism:RF-INDUST-1. 
  22. Jump up to: 22.0 22.1 "28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz". https://www.st.com/content/ccc/resource/sales_and_marketing/promotional_material/flyer/group0/f8/56/37/01/de/48/4d/60/flldmos1219_flyer/files/flldmos1219.pdf/jcr:content/translations/en.flldmos1219.pdf. 
  23. Jump up to: 23.0 23.1 "S-Band Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/s-band-radar:RF-AEROSPACE-DEFENSE-4. 
  24. "RF Cellular Infrastructure". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure:RF-CELLULAR-INFRASTRUCTURE. 
  25. Jump up to: 25.0 25.1 25.2 25.3 "RF Mobile Radio". https://www.nxp.com/products/rf/rf-power/rf-mobile-radio:RF-MOBILE-RADIO. 
  26. "UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors". https://www.st.com/content/ccc/resource/technical/document/user_manual/74/4f/b1/0b/5a/8e/49/f5/CD00261794.pdf/files/CD00261794.pdf/jcr:content/translations/en.CD00261794.pdf. 
  27. Jump up to: 27.0 27.1 "915 MHz RF Cooking". https://www.nxp.com/products/rf/rf-power/rf-cooking/915-mhz-rf-cooking:RF-COOKING-1. 
  28. Jump up to: 28.0 28.1 28.2 Torres, Victor (21 June 2018). "Why LDMOS is the best technology for RF energy". Ampleon. https://www.mwee.com/design-center/why-ldmos-best-technology-rf-energy. 
  29. Jump up to: 29.0 29.1 29.2 "RF Defrosting". https://www.nxp.com/products/rf/rf-power/rf-defrosting:RF-DEFROSTING-HOME-PG. 
  30. "White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications". Freescale Semiconductor. September 2011. https://www.nxp.com/docs/en/white-paper/50VRFLDMOSWP.pdf. 
  31. Jump up to: 31.0 31.1 "RF Cellular Infrastructure". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure:RF-CELLULAR-INFRASTRUCTURE. 
  32. "450 - 1000 MHz". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure/450-1000-mhz:RF-CELLULAR-1-AMPLIFIERS. 
  33. "3400 - 4100 MHz". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure/3400-4100-mhz:RF-CELLULAR-4-AMPLIFIERS. 
  34. "HF, VHF and UHF Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/hf-vhf-and-uhf-radar:RF-AEROSPACE-DEFENSE-1. 

External links