Engineering:LDMOS

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Short description: Double-diffused MOSFET

LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,[2][3][4] enabling the majority of the world's cellular voice and data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.[6] Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include TSMC, LFoundry, Tower Semiconductor, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon.

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Applications

Common applications of LDMOS technology include the following.

RF LDMOS

Common applications of RF LDMOS technology include the following.


See also

References

  1. 1.0 1.1 A. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
  2. 2.0 2.1 2.2 2.3 2.4 Baliga, Bantval Jayant (2005). Silicon RF Power MOSFETS. World Scientific. pp. 1–2. ISBN 9789812561213. https://books.google.com/books?id=StJpDQAAQBAJ&pg=PA1. 
  3. 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 Asif, Saad (2018). 5G Mobile Communications: Concepts and Technologies. CRC Press. p. 134. ISBN 9780429881343. https://books.google.com/books?id=yg1mDwAAQBAJ&pg=PT134. 
  4. 4.00 4.01 4.02 4.03 4.04 4.05 4.06 4.07 4.08 4.09 4.10 4.11 Theeuwen, S. J. C. H.; Qureshi, J. H. (June 2012). "LDMOS Technology for RF Power Amplifiers". IEEE Transactions on Microwave Theory and Techniques 60 (6): 1755–1763. doi:10.1109/TMTT.2012.2193141. ISSN 1557-9670. Bibcode2012ITMTT..60.1755T. https://www.ampleon.com/documents/published-paper/AMP-PP-2017-0503.pdf. 
  5. 5.00 5.01 5.02 5.03 5.04 5.05 5.06 5.07 5.08 5.09 5.10 "LDMOS Products and Solutions". https://www.nxp.com/products/rf/rf-power/ldmos-products-and-solutions:RF-LDMOS-Products-Sol. 
  6. van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Orlando, FL. pp. 69–72. doi:10.1109/RWS.2008.4463430. 
  7. 7.0 7.1 Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047. https://archive.org/details/highperfomanceau0000dunc/page/177. 
  8. "A 600W broadband HF amplifier using affordable LDMOS devices" (in en-GB). 2019-10-27. https://qrpblog.com/2019/10/a-600w-broadband-hf-amplifier-using-affordable-ldmos-devices/. 
  9. 9.0 9.1 9.2 "L-Band Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/l-band-radar:RF-AEROSPACE-DEFENSE-3. 
  10. 10.0 10.1 10.2 10.3 "Avionics". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/avionics:RF-AEROSPACE-DEFENSE-2. 
  11. 11.0 11.1 11.2 "RF Aerospace and Defense". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense:RF-AEROSPACE-DEFENSE-HOME. 
  12. 12.0 12.1 "Communications and Electronic Warfare". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/comm-and-electronic-warfare:RF-AEROSPACE-DEFENSE-5. 
  13. 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 "Mobile & Wideband Comms". https://www.st.com/en/radio-frequency-transistors/mobile-wideband-comms.html. 
  14. 14.0 14.1 14.2 14.3 14.4 14.5 "470-860 MHz – UHF Broadcast". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/470-860-mhz-uhf-broadcast:RF-INDUST-2. 
  15. 15.0 15.1 15.2 15.3 15.4 15.5 "RF LDMOS Transistors". https://www.st.com/en/radio-frequency-transistors/rf-ldmos-transistors.html. 
  16. 16.0 16.1 "28/32V LDMOS: IDDE technology boost efficiency & robustness". https://www.st.com/content/ccc/resource/sales_and_marketing/promotional_material/flyer/group0/37/ed/5c/aa/d6/c6/4a/71/flldmos11219_flyer/files/flldmos11219.pdf/jcr:content/translations/en.flldmos11219.pdf. 
  17. 17.0 17.1 17.2 17.3 17.4 17.5 "AN2048: Application note – PD54008L-E: 8 W - 7 V LDMOS in PowerFLAT packages for wireless meter reading applications". https://www.st.com/content/ccc/resource/technical/document/application_note/dc/43/d5/6e/39/5b/45/90/CD00044466.pdf/files/CD00044466.pdf/jcr:content/translations/en.CD00044466.pdf. 
  18. 18.00 18.01 18.02 18.03 18.04 18.05 18.06 18.07 18.08 18.09 18.10 "ISM & Broadcast". https://www.st.com/en/radio-frequency-transistors/ism-broadcast.html. 
  19. 19.0 19.1 19.2 19.3 "700-1300 MHz – ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/700-1300-mhz-ism:RF-INDUST-3. 
  20. 20.0 20.1 "2450 MHz – ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/2450-mhz-ism:RF-INDUST-4. 
  21. 21.0 21.1 21.2 21.3 21.4 21.5 21.6 21.7 "1-600 MHz – Broadcast and ISM". https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/1-600-mhz-broadcast-and-ism:RF-INDUST-1. 
  22. 22.0 22.1 "28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz". https://www.st.com/content/ccc/resource/sales_and_marketing/promotional_material/flyer/group0/f8/56/37/01/de/48/4d/60/flldmos1219_flyer/files/flldmos1219.pdf/jcr:content/translations/en.flldmos1219.pdf. 
  23. 23.0 23.1 "S-Band Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/s-band-radar:RF-AEROSPACE-DEFENSE-4. 
  24. "RF Cellular Infrastructure". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure:RF-CELLULAR-INFRASTRUCTURE. 
  25. 25.0 25.1 25.2 25.3 "RF Mobile Radio". https://www.nxp.com/products/rf/rf-power/rf-mobile-radio:RF-MOBILE-RADIO. 
  26. "UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors". https://www.st.com/content/ccc/resource/technical/document/user_manual/74/4f/b1/0b/5a/8e/49/f5/CD00261794.pdf/files/CD00261794.pdf/jcr:content/translations/en.CD00261794.pdf. 
  27. 27.0 27.1 "915 MHz RF Cooking". https://www.nxp.com/products/rf/rf-power/rf-cooking/915-mhz-rf-cooking:RF-COOKING-1. 
  28. 28.0 28.1 28.2 Torres, Victor (21 June 2018). "Why LDMOS is the best technology for RF energy". Ampleon. https://www.mwee.com/design-center/why-ldmos-best-technology-rf-energy. 
  29. 29.0 29.1 29.2 "RF Defrosting". https://www.nxp.com/products/rf/rf-power/rf-defrosting:RF-DEFROSTING-HOME-PG. 
  30. "White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications". Freescale Semiconductor. September 2011. https://www.nxp.com/docs/en/white-paper/50VRFLDMOSWP.pdf. 
  31. 31.0 31.1 "RF Cellular Infrastructure". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure:RF-CELLULAR-INFRASTRUCTURE. 
  32. "450 - 1000 MHz". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure/450-1000-mhz:RF-CELLULAR-1-AMPLIFIERS. 
  33. "3400 - 4100 MHz". https://www.nxp.com/products/rf/rf-power/rf-cellular-infrastructure/3400-4100-mhz:RF-CELLULAR-4-AMPLIFIERS. 
  34. "HF, VHF and UHF Radar". https://www.nxp.com/products/rf/rf-power/rf-aerospace-and-defense/hf-vhf-and-uhf-radar:RF-AEROSPACE-DEFENSE-1. 

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