Silicon, 14 Si Silicon Pronunciation Appearance crystalline, reflective with bluish-tinged faces Standard atomic weight A r, std (Si) [ 28.084 , 28.086 ] conventional: 28.085 Silicon in the periodic table
Atomic number (Z ) 14 Group group 14 (carbon group) Period period 3 Block p-block Element category p-block Electron configuration [Ne ] 3s2 3p2 Electrons per shell 2, 8, 4 Physical properties Phase at STP solid Melting point 1687 K (1414 °C, 2577 °F) Boiling point 3538 K (3265 °C, 5909 °F) Density (near r.t. ) 2.3290 g/cm3 when liquid (at m.p. ) 2.57 g/cm3 Heat of fusion 50.21 kJ/mol Heat of vaporization 383 kJ/mol Molar heat capacity 19.789 J/(mol·K) Vapor pressure
P (Pa)
1
10
100
1 k
10 k
100 k
at T (K)
1908
2102
2339
2636
3021
3537
Atomic properties Oxidation states −4 , −3, −2, −1, 0,[1] +1,[2] +2, +3, +4 (an amphoteric oxide)Electronegativity Pauling scale: 1.90 Ionization energies 1st: 786.5 kJ/mol 2nd: 1577.1 kJ/mol 3rd: 3231.6 kJ/mol (more ) Atomic radius empirical: 111 pm Covalent radius 111 pm Van der Waals radius 210 pm Spectral lines of siliconOther properties Natural occurrence primordial Crystal structure face-centered diamond-cubic Speed of sound thin rod 8433 m/s (at 20 °C) Thermal expansion 2.6 µm/(m·K) (at 25 °C) Thermal conductivity 149 W/(m·K) Electrical resistivity 2.3× 103 Ω·m (at 20 °C)[3] Band gap 1.12 eV (at 300 K) Magnetic ordering diamagnetic [4] Magnetic susceptibility −3.9·10−6 cm3 /mol (298 K)[5] Young's modulus 130–188 GPa[6] Shear modulus 51–80 GPa[6] Bulk modulus 97.6 GPa[6] Poisson ratio 0.064–0.28[6] Mohs hardness 6.5 CAS Number 7440-21-3 History Naming after Latin 'silex' or 'silicis', meaning flint Prediction Antoine Lavoisier (1787) Discovery and first isolationJöns Jacob Berzelius [7] [8] (1823)Named by Thomas Thomson (1817) Main isotopes of silicon
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Si
data m.p. cat
in
calc from C
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report
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C
1414
—
—
K
1687
1687
0
F
2577
2577
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max precision
0
WD
input
C: 1414, K: 1687, F: 2577
comment
Si
data b.p. cat
in
calc from C
diff
report
ref
C
3265
—
—
K
3538
3538
0
F
5909
5909
0
max precision
0
WD
input
C: 3265, K: 3538, F: 5909
comment
References
These references will appear in the article, but this list appears only on this page.
↑ "New Type of Zero-Valent Tin Compound" . Chemistry Europe . 27 August 2016. https://www.chemistryviews.org/details/news/9745121/New_Type_of_Zero-Valent_Tin_Compound.html .
↑ Ram, R. S. (1998). "Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD" . J. Mol. Spectr. 190 (2): 341–352. doi :10.1006/jmsp.1998.7582 . PMID 9668026 . http://bernath.uwaterloo.ca/media/184.pdf .
↑ Eranna, Golla (2014). Crystal Growth and Evaluation of Silicon for VLSI and ULSI . CRC Press. p. 7. ISBN 978-1-4822-3281-3 . https://books.google.com/books?id=bo6ZBQAAQBAJ&pg=PA7 .
↑ Magnetic susceptibility of the elements and inorganic compounds , in Lide, D. R., ed (2005). CRC Handbook of Chemistry and Physics (86th ed.). Boca Raton (FL): CRC Press. ISBN 0-8493-0486-5 .
↑ Weast, Robert (1984). CRC, Handbook of Chemistry and Physics . Boca Raton, Florida: Chemical Rubber Company Publishing. pp. E110. ISBN 0-8493-0464-4 .
↑ Jump up to: 6.0 6.1 6.2 6.3 Hopcroft, Matthew A.; Nix, William D.; Kenny, Thomas W. (2010). "What is the Young's Modulus of Silicon?" . Journal of Microelectromechanical Systems 19 (2): 229. doi :10.1109/JMEMS.2009.2039697 . http://silicon.reddogresearch.com/ .
↑ Weeks, Mary Elvira (1932). "The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum". Journal of Chemical Education 9 (8): 1386–1412. doi :10.1021/ed009p1386 . Bibcode : 1932JChEd...9.1386W .
↑ Voronkov, M. G. (2007). "Silicon era". Russian Journal of Applied Chemistry 80 (12): 2190. doi :10.1134/S1070427207120397 .
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