Physics:Spin transistor
The magnetically sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named for spintronics, the technology which this development spawned), originally proposed in 1990 by Supriyo Datta and Biswajit Das,[1] is an alternative design on the common transistor invented in the 1940s. This device was considered one of the Nature milestones in spin in 2008.[2] A new all-electric all-semiconductor design was later developed as an alternative approach to realizing spin transistor functionality in a CMOS-compatible platform.[3]
Description
The spin transistor comes about as a result of research on the ability of electrons (and other fermions) to naturally exhibit one of two (and only two) states of spin: known as "spin up" and "spin down". Thus, spin transistors operate on electron spin as embodying a two-state quantum system. Unlike its namesake predecessor, which operates on an electric current, spin transistors operate on electrons on a more fundamental level; it is essentially the application of electrons set in particular states of spin to store information.
A second advantage of a spin transistor is that the spin of an electron is semi-permanent and can be used as means of creating cost-effective non-volatile solid state storage that does not require the constant application of current to sustain. It is one of the technologies being explored for magnetic random access memory (MRAM).
Because of its high potential for practical use in the computer world, spin transistors are currently being researched in various firms throughout the world, such as in England and in Sweden. By the mid‑2010s, several breakthroughs had enabled the fabrication the production of spin transistors, using readily available substances (e.g., carbon nanotubes)[4], that can operate at room temperature: a precursor to commercial viability.
References
- ↑ Datta, Supriyo; Das, Biswajit (1990). "Electronic analog of the electrooptic modulator". Applied Physics Letters 56 (7): 665–667. doi:10.1063/1.102730. Bibcode: 1990ApPhL..56..665D.
- ↑ Gerstner, Ed (2008). "Information in a spin" (in en). Nature Physics 4 (1): S18. doi:10.1038/nphys875. ISSN 1745-2481. https://www.nature.com/articles/milespin20.
- ↑ Chuang, Pojen; Ho, Sheng-Chin; Smith, L. W.; Sfigakis, F.; Pepper, M.; Chen, Chin-Hung; Fan, Ju-Chun; Griffiths, J. P. et al. (January 2015). "All-electric all-semiconductor spin field-effect transistors". Nature Nanotechnology 10 (1): 35–39. doi:10.1038/nnano.2014.296.
- ↑ https://www.authorea.com/users/830996/articles/1231436-spin-selectivity-in-chiral-carbon-nanotubes-to-polarize-current-for-spintronic-devices
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