Chemistry:Indium arsenide

Indium arsenide

Names
IUPAC name Indium(III) arsenide
Other names Indium monoarsenide
Identifiers
CAS Number	1303-11-3 Y
3D model (JSmol)	Interactive image Interactive image
ChemSpider	82621 Y
PubChem CID	91500
UNII	J1A23S0911 Y
InChI InChI=1S/As.In Y Key: RPQDHPTXJYYUPQ-UHFFFAOYSA-N Y InChI=1/As.In/rAsIn/c1-2 Key: RPQDHPTXJYYUPQ-FVESRWMKAB
SMILES [In+3].[As-3] [In]#[As]
Properties
Chemical formula	InAs
Molar mass	189.740 g/mol
Density	5.67 g/cm3
Melting point	942 °C (1,728 °F; 1,215 K)942
Band gap	0.354 eV (300 K)
Electron mobility	40000 cm2/(V*s)
Thermal conductivity	0.27 W/(cm*K) (300 K)
Refractive index (nD)	4
Structure
Crystal structure	Zinc blende
Lattice constant	a = 6.0583 Å
Thermochemistry
Heat capacity (C)	47.8 J·mol−1·K−1
Std molar entropy (So298)	75.7 J·mol−1·K−1
Std enthalpy of formation (ΔfH⦵298)	-58.6 kJ·mol−1
Gibbs free energy (ΔfG˚)	-53.6 kJ·mol−1
Hazards
Safety data sheet	External SDS
GHS pictograms
GHS Signal word	Danger
GHS hazard statements	H301, H331
GHS precautionary statements	P261, P301+310, P304+340, P311, P405, P501
NFPA 704 (fire diamond)	0 4 0
Related compounds
Other anions	Indium nitride Indium phosphide Indium antimonide
Other cations	Gallium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.

Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature.

Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making diode lasers.

InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as a terahertz radiation source as it is a strong photo-Dember emitter.

Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots. Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.

Cited sources

• Haynes, William M., ed (2016). CRC Handbook of Chemistry and Physics (97th ed.). CRC Press. ISBN 9781498754293. 

External links

• Ioffe institute data archive entry
• National Compound Semiconductor Roadmap entry for InAs at ONR web site