Biography:Hiroshi Amano

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Short description: Japanese physicist, engineer and inventor
Hiroshi Amano
天野 浩
Hiroshi Amano 20141211.jpg
Born (1960-09-11) September 11, 1960 (age 63)
Hamamatsu, Japan[1]
Alma materNagoya University
Known forBlue and white LEDs
AwardsNobel Prize in Physics (2014)
Person of Cultural Merit (2014)
Order of Culture (2014)
Foreign Member of National Academy of Engineering (2016)
Scientific career
InstitutionsNagoya University
Doctoral advisorIsamu Akasaki

Hiroshi Amano (天野 浩, Amano Hiroshi, born September 11, 1960) is a Japanese physicist, engineer and inventor specializing in the field of semiconductor technology. For his work he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura for "the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources".[2]

Amano was elected as a member of the National Academy of Engineering in 2016 for the development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.

Early life and education

Amano was born in Hamamatsu, Japan, on September 11, 1960. He received his BE, ME and DE degree in 1983, 1985 and 1989, respectively, from Nagoya University.

During elementary school days, he played soccer as a goalkeeper and softball as a catcher. He was also passionate about amateur radio and despite hating studying, he was good at mathematics. Upon entering high school, he began taking his studies seriously and became a top student by studying every day late into the night.


Blue light-emitting diodes

From 1988 to 1992, he was a research associate at Nagoya University. In 1992, he moved to Meijo University, where he was an assistant professor. From 1998 to 2002, He was an associate professor. In 2002, he became a professor. In 2010, he moved to the Graduate School of Engineering, Nagoya University, where he is currently a professor.

He joined Professor Isamu Akasaki's group in 1982 as an undergraduate student. Since then, he has been doing research on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes today. In 1985, he developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes. In 1989, he succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the world.

Known to be keen on research, Amano's laboratory was always lit late at night, such as weekdays, holidays, New Year's Day, and was called "no night castle".[3] According to his students in the laboratory, Amano has an optimistic and temperate personality, and is never angry.[4][5]


with Shuji Nakamura and Isamu Akasaki (at the Grand Hôtel on December 8, 2014)
  • 1994 – Fifth Optoelectronics Conference A Special Award
  • 1996 – IEEE/LEOS Engineering Achievement Award
  • 1998 – Japanese Journal of Applied Physics Award for the best review paper
  • 1998 – British Rank Prize
  • 2001 – Marubun Academic Award
  • 2002 – Takeda Award
  • 2003 – SSDM Award
  • 2004 – TITech精密工学研究所第1回P&Iパテント・オブ・ザ・イヤー
  • 2008 – 日本結晶成長学会論文賞
  • 2014 – APEX/JJAP Editorial Contribution Award der Japan Society of Applied Physics
  • 2014 – Nobel Prize in Physics
  • 2015 – Chu-Nichi Culture Award
  • 2015 – Special Achievement Award, Institute of Electronics, Information and Communication Engineers
  • 2015 – Prizes for Science and Technology (Research Category) by the Minister of Education, Culture, Sports, Science and Technology
  • 2015 – 産学官連携功労者表彰日本学術会議会長賞
  • 2015 – Asia Game Changer Award[6]


with Shinzō Abe (at the Prime Minister's Official Residence on October 22, 2014)
  • 2009 – Fellow, Japan Society of Applied Physics
  • 2009 – Nistep (National Institute of Science and Technology Policy) Researcher from the Ministry of Education of Japan
  • 2011 – Fellow, Institute of Physics
  • 2014 – Person of Cultural Merit, the Japanese Government
  • 2014 – Order of Culture, the Japanese Emperor
  • 2015 – Honorary citizenship of Shizuoka prefecture
  • 2015 – Honorary citizenship of Hamamatsu City
  • 2015 – Aichi Prefecture Academic Honors
  • 2015 – Nagoya City Academic Honors
  • 2015 – Honorary Fellow, Japan Sweden Society
  • 2015 – Honorary citizenship of Aichi prefecture
  • 2015 – 丸八会顕彰
  • 2016 – Foreign Member of the National Academy of Engineering[7]
  • 2019 - Foreign members of the Chinese Academy of Engineering
  • 2022 - Members of the Japan Academy[8]


Amano's wife is a Japanese lecturer at Comenius University in Bratislava, Slovakia.[9]

Selected publications

  • Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (1986-02-03). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters (AIP Publishing) 48 (5): 353–355. doi:10.1063/1.96549. ISSN 0003-6951. Bibcode1986ApPhL..48..353A. 
  • Amano, Hiroshi; Akasaki, Isamu; Kozawa, Takahiro; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Ikeda, Kousuke; Ishii, Yoshikazu (1988). "Electron beam effects on blue luminescence of zinc-doped GaN". Journal of Luminescence (Elsevier BV) 40-41: 121–122. doi:10.1016/0022-2313(88)90117-2. ISSN 0022-2313. Bibcode1988JLum...40..121A. 
  • Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (1989-12-20). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. doi:10.1143/jjap.28.l2112. ISSN 0021-4922. Bibcode1989JaJAP..28L2112A. 
  • Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248. Bibcode1991JCrGr.115..648M. 
  • Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (1991-09-15). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. doi:10.1143/jjap.30.1924. ISSN 0021-4922. Bibcode1991JaJAP..30.1924I. 
  • I. Akasaki, H. Amano, K. Itoh, N. Koide & K. Manabe, Int. Phys. Conf. Ser. 129, 851 (1992).
  • Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (1995-11-01). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B): L1517. doi:10.7567/jjap.34.l1517. ISSN 0021-4922. 

See also

  • List of Japanese Nobel laureates


External links

  • Miss nobel-id as parameter