Biography:Hiroshi Amano

Hiroshi Amano
天野 浩
Born	(1960-09-11) September 11, 1960 Hamamatsu, Shizuoka Prefecture, Japan
Alma mater	Nagoya University (BE, ME, DE)
Known for	Blue and white LEDs
Awards	Rank Prize for Optoelectronics (1998) Nobel Prize in Physics (2014) Asia Game Changer Award (2015) Asian Scientist 100 (2016)
Scientific career
Fields	Optoelectronics
Institutions	Nagoya University (1988–1992, 2010–present) Meijo University (1992–2010)
Doctoral advisor	Isamu Akasaki

Hiroshi Amano (Japanese: 天野 浩, romanized: Amano Hiroshi; born September 11, 1960) is a Japanese electronics engineer specializing in the field of semiconductor technology. He is a co-inventor of the blue LED, for which he was awarded the 2014 Nobel Prize in Physics along with Isamu Akasaki and Shuji Nakamura.

Early life and education

Hiroshi Amano was born on September 11, 1960, in Hamamatsu, Japan, the son of father Tatsuji and mother Yoshiko.

During elementary school days, Amano played soccer as a goalkeeper and softball as a catcher. He was also passionate about amateur radio and despite hating studying, he was good at mathematics. Upon entering high school, he began taking his studies seriously and became a top student by studying every day late into the night.

In 1979, Amano entered Nagoya University, where he received his B.E., M.E., and D.E. degrees in 1983, 1985, and 1989, respectively.

Career

From 1988 to 1992, Amano was a research associate at Nagoya University. In 1992, he moved to Meijo University as an assistant professor. From 1998 to 2002, he was an associate professor. In 2002, he became a professor. In 2010, Amano returned to Nagoya University, where he is currently a professor in the Graduate School of Engineering.

Research

Blue light-emitting diodes

Amano joined Professor Isamu Akasaki's group in 1982 as an undergraduate student. Since then, he has been doing research on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes today. In 1985, he developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes. In 1989, he succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the world.

Known to be keen on research, Amano's laboratory was always lit late at night, such as weekdays, holidays, New Year's Day, and was called "no night castle". According to his students in the laboratory, Amano has an optimistic and temperate personality, and is never angry.

Family

Amano's wife is a Japanese lecturer at Comenius University in Bratislava, Slovakia.

Recognition

Awards

Year	Organization	Award	Citation	Ref.
1998	Rank Foundation	Rank Prize for Optoelectronics	"For contributions to the invention of nitride based blue and green semiconductor diode lasers."
2014	Royal Swedish Academy of Sciences	Nobel Prize in Physics	"For the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources."
2015	Asia Society	Asia Game Changer Award	"For lighting our world in a groundbreaking and sustainable way."
2016	Asian Scientist	Asian Scientist 100

Memberships

Year	Organization	Type	Ref.
2009	Japan Society of Applied Physics	Fellow
2015	American Physical Society	Fellow
2016	National Academy of Engineering	International Member
2019	Chinese Academy of Engineering	Foreign Academician
2022	Japan Academy	Member

Honorary degrees

Year	University	Ref.
2016	University of Padova
2017	Linköping University
2025	University of Milano-Bicocca

Selected publications

• Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (1986-02-03). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters (AIP Publishing) 48 (5): 353–355. doi:10.1063/1.96549. ISSN 0003-6951. Bibcode: 1986ApPhL..48..353A. 
• Amano, Hiroshi; Akasaki, Isamu; Kozawa, Takahiro; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Ikeda, Kousuke; Ishii, Yoshikazu (1988). "Electron beam effects on blue luminescence of zinc-doped GaN". Journal of Luminescence (Elsevier BV) 40-41: 121–122. doi:10.1016/0022-2313(88)90117-2. ISSN 0022-2313. Bibcode: 1988JLum...40..121A. 
• Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (1989-12-20). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. doi:10.1143/jjap.28.l2112. ISSN 0021-4922. Bibcode: 1989JaJAP..28L2112A. 
• Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped Al_xGa_1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. doi:10.1016/0022-0248(91)90820-u. ISSN 0022-0248. Bibcode: 1991JCrGr.115..648M. 
• Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (1991-09-15). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. doi:10.1143/jjap.30.1924. ISSN 0021-4922. Bibcode: 1991JaJAP..30.1924I. 
• I. Akasaki, H. Amano, K. Itoh, N. Koide & K. Manabe, Int. Phys. Conf. Ser. 129, 851 (1992).
• Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (1995-11-01). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B). doi:10.7567/jjap.34.l1517. ISSN 0021-4922. 

See also

• List of Japanese Nobel laureates

External links

• Miss nobel-id as parameter