Chemistry:Gallium(III) selenide

From HandWiki
Gallium(III) selenide
Names
Other names
gallium triselenide
Identifiers
ChemSpider
EC Number
  • 234-693-8
Properties
Ga2Se3
Molar mass 376.33 g/mol
Appearance reddish-black crystals
Odor slight garlic odor
Density 4.92 g/cm3
Melting point 1,020 °C (1,870 °F; 1,290 K)
decomposition
Hazards
GHS pictograms GHS06: ToxicGHS08: Health hazardGHS09: Environmental hazard
GHS Signal word Danger
H301, H330, H373, H410
P260, P264, P270, P271, P273, P284, P301+310, P304+340, P310, P314, P320, P321, P330, P391, P403+233, P405, P501
NFPA 704 (fire diamond)
Flammability code 0: Will not burn. E.g. waterHealth code 3: Short exposure could cause serious temporary or residual injury. E.g. chlorine gasReactivity code 1: Normally stable, but can become unstable at elevated temperatures and pressures. E.g. calciumSpecial hazards (white): no codeNFPA 704 four-colored diamond
0
3
1
Related compounds
Other anions
Gallium(III) oxide, Gallium(III) sulfide, Gallium tribromide, Gallium(III) telluride
Other cations
Aluminium(III) selenide, Indium(III) selenide
Related compounds
Gallium monoselenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
☑Y verify (what is ☑Y☒N ?)
Infobox references

Gallium(III) selenide (Ga2Se3) is a chemical compound. It has a defect sphalerite (cubic form of ZnS) structure.[1] It is a p-type semiconductor [2]

It can be formed by union of the elements. It hydrolyses slowly in water and quickly in mineral acids to form toxic hydrogen selenide gas. The reducing capabilities of the selenide ion make it vulnerable to oxidizing agents. It is advised therefore that it not come into contact with bases.[citation needed]

References

  1. Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8. 
  2. Temperature dependence of electrical conductivity and Hall effect of Ga2Se3 single crystal, A. E. Belal, Dr. H. A. El-shaikh, I. A. Ashraf Crystal Research and Technology,30, 1 , 135 - 139