Chemistry:Indium gallium aluminium nitride
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Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc.[expand acronym] This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.
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